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NTP75N06, NTB75N06
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 1)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
V (BR)DSS
60
?
71
73
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
?
?
?
?
10
100
Gate?Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
I GSS
?
?
± 100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
V GS(th)
2.0
?
2.8
8.0
4.0
?
Vdc
mV/ ° C
Static Drain?to?Source On?Resistance (Note 1)
R DS(on)
m W
(V GS = 10 Vdc, I D = 37.5 Adc)
Static Drain?to?Source On?Voltage (Note 1)
(V GS = 10 Vdc, I D = 75 Adc)
(V GS = 10 Vdc, I D = 37.5 Adc, T J = 150 ° C)
V DS(on)
?
?
?
8.2
0.72
0.63
9.5
0.86
?
Vdc
Forward Transconductance (Note 1) (V DS = 15 Vdc, I D = 37.5 Adc)
g FS
?
40.2
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
3220
4510
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
1020
234
1430
330
SWITCHING CHARACTERISTICS (Note 2)
Turn?On Delay Time
t d(on)
?
16
25
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 75 Adc,
V GS = 10 Vdc, R G = 9.1 W ) (Note 1)
t r
t d(off)
t f
?
?
?
112
90
100
155
125
140
Gate Charge
(V DS = 48 Vdc, I D = 75 Adc,
V GS = 10 Vdc) (Note 1)
Q T
Q 1
Q 2
?
?
?
92
14
44
130
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
Reverse Recovery Time
(I S = 75 Adc, V GS = 0 Vdc) (Note 1)
(I S = 75 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 75 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 1)
V SD
t rr
t a
?
?
?
?
1.0
0.9
77
49
1.1
?
?
?
Vdc
ns
t b
?
28
?
Reverse Recovery Stored Charge
Q RR
?
0.16
?
m C
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
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